A post-doctoral position is opened at the Institute for Nanosciences and Cryogenics (INAC) of the CEA Grenoble (France) for up to two years, on the theory and modeling of silicon-on-insulator quantum bits.
Quantum information technologies on silicon have raised an increasing interest over the last five years. CEA/LETI is pushing forward its own original platform based on the “silicon-on-insulator” (SOI) technology. The information is stored in the spin of carrier(s) trapped in quantum dots, which are etched in a thin silicon film and are controlled by metal gates. SOI has many assets: the patterning of the thin film can produce smaller, hence more scalable qubits; also, the use of the silicon substrate beneath as a back gate provides extra control over the qubits.
Many aspects of the physics of silicon spin qubits are still poorly understood. It is, therefore, essential to complement the experimental activity with state-of-the-art modeling. For that purpose, CEA/INAC is actively developing the “TB_Sim” code. TB_Sim relies on atomistic tight-binding and multi-bands k.p descriptions of the electronic structure of materials and includes, in particular, a time-dependent configuration interaction solver for the dynamics of interacting qubits.
The aims of this post-doctoral position are, in particular:
* To model spin manipulation and readout in SOI qubits in order to get a better understanding of the physics of these devices and optimize their design.
* To model decoherence and relaxation at the atomistic scale.
This work will be strongly coupled to the experimental activity in Grenoble. CEA is indeed at the heart of a quantum silicon eco-system in Grenoble, bringing together CEA/LETI (fabrication), CEA/INAC and CNRS/Néel (characterization and modeling) around the development of SOI qubits. The candidate will, therefore, have access to experimental data on state-of-the-art devices.
The candidate should send her/his CV to Yann-Michel Niquet (yniquet@cea.fr), with a list of publications, a motivation letter with a summary of past accomplishments, and contact details of two persons for references (or recommendation letters).
More details can be found at: http://inac.cea.fr/L_Sim/Pdoc.pdf
