Postdoctoral position at NIST Gaithersburg
The Si quantum dot group led by Neil Zimmerman is looking for a postdoctoral fellow to work on a new project in collaboration with Intel Corporation.
The postdoctoral researcher will be primarily involved in the following:
Noise studies of Si dot devices fabricated at Intel. These studies will include i) low-frequency noise, ii) long-term charge offset drift, and iii) high-frequency noise using charge reflectometry. The goals of this project will include i) elucidating the sources of charge noise in Si dots, ii) measuring noise over many orders of magnitude in frequency in order to test spectral shapes of the noise, iii) correlating noise with decoherence and iv) guiding the fabrication choices towards larger-scale devices.
This work will involve significant chances for the postdoctoral researcher to have close interaction with our industrial partner.
The postdoctoral researcher will likely also be involved in our burgeoning project to make and measure single atom Si devices at NIST. This project will involve i) initial measurements of monolayer-based nanoscale and single-electron devices, ii) a variety of subsequent low-and high-frequency experiments involving these devices.
Amongst the qualifications in a candidate which would be helpful (but are not mandatory) are: i) prior experience in experimental quantum dot electrical transport measurements, ii) Si single-electron and quantum dot device fabrication and characterization, iii) high-frequency electrical measurements at low temperatures.