We seek a passionate and committed candidate to work on the fabrication and development of cyrogenic high electron mobility transistor (HEMT) devices for use in quantum transport measurements. The design of HEMT devices and the development of fabrication recipes for realising such devices will be a crucial area of work.
This position resides in the Quantum Materials and Devices group at the Institute of Materials Research and Engineering (IMRE), A*STAR. As part of our research team, you will contribute to the fabrication of devices and document process recipes for our research in quantum devices with the goal of building optimised cyrogenic HEMTs. You will also participate in the measurement of the devices including setting up of measurement protocols, data collection and analysis.
Design and fabrication of HEMT devices.
Develop process fabrication and etching recipes.
Contribute to device characterization and measurements.
Provide technical documentation and manuscript writing.
Contribute to or lead in grant writing depending on level of experience.
PhD degree in physics, applied physics, materials science, electrical-electronics engineering, or related fields.
Laboratory experience in materials processing and device fabrication. Well-versed in lithography and etching techniques. Experience with 2-dimensional materials strongly preferred.
Ability to work unsupervised and collaboratively with a team.
Resourceful in problem solving and critical thinking.
Meticulous and analytical in experimental work.
Good presentation skills (written and verbal).